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D
S G D
S
G S
SO
2 T-
27
APL1001J
1000V 18.0A 0.60
ISOTOP(R)
"UL Recognized" File No. E145592 (S)
POWER MOS IV (R)
MAXIMUM RATINGS
Symbol VDSS ID IDM, lLM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25C Linear Derating Factor
1
SINGLE DIE ISOTOP(R) PACKAGE
All Ratings: TC = 25C unless otherwise specified.
APL1001J UNIT Volts Amps
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
1000 18 72 30 520 4.16 -55 to 150
and Inductive Current Clamped
Volts Watts W/C C
Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec.
300
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(ON) RDS(ON) IDSS IGSS VGS(TH) Characteristic / Test Conditions / Part Number Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 A) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts Amps
1000 18 0.60 250
(VDS > I D(ON) x R DS(ON) Max, VGS = 8V)
2
Drain-Source On-State Resistance
(VGS = 10V, 0.5 ID [Cont.])
Ohms A
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
1000 100 2 4
nA Volts
THERMAL CHARACTERISTICS
Symbol Characteristic RJC RJA Junction to Case Junction to Ambient MIN TYP MAX UNIT C/W
0.24 40 2500 13
Volts
050-5904 Rev C 3-2002
VIsolation RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.) Torque Maximum Torque for Device Mounting Screws and Electrical Terminations.
lb*in
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA EUROPE
405 S.W. Columbia Street Chemin de Magret
Bend, Oregon 97702 -1035 F-33700 Merignac - France
Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 15V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C RG = 0.6 MIN TYP MAX
APL1001J
UNIT
6000 775 285 14 14 60 14
7200 1080 430 28 28 92 20
ns pF
SAFE OPERATING AREA CHARACTERISTICS
Symbol SOA1 Characteristic Safe Operating Area Test Conditions / Part Number VDS = 400 V, IDS = 0.813A, t = 20 sec., TC = 60C MIN TYP MAX UNIT Watts
325
1 Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1) 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
0.3
, THERMAL IMPEDANCE (C/W)
D=0.5 0.1 0.05 0.2 0.1 0.05 0.01 0.005 0.02 0.01 SINGLE PULSE 0.001 10-5 10-4 Note:
PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC
Z
JC
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10
40 VGS=6.5V, 7.0V, 8.0V, 10V & 15V
ID, DRAIN CURRENT (AMPERES)
40 VGS= 15V, 10V, 8V, 7V & 6.5V
ID, DRAIN CURRENT (AMPERES)
30
6.0 V
30
6.0 V
5.5 V 20 5.0 V 10 4.5 V
5.5 V 20 5.0 V 10 4.5 V
050-5904 Rev C 3-2002
0 20 40 60 80 100 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
0
0 4 8 12 16 20 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
0
TJ = -55C
ID, DRAIN CURRENT (AMPERES)
VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
20
1.30
NORMALIZED TO V
GS
= 10V @ 0.5 I [Cont.]
D
1.20 VGS=10V 1.10
15
10
1.00
VGS=20V
5
TJ = +125C TJ = +25C TJ = -55C
0.90
0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS 20
ID, DRAIN CURRENT (AMPERES)
0
0.80
0
10 20 30 40 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
BVDSS(ON), DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
1.15 1.10 1.05 1.00
15
10
0.95 0.90 0.85
5
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
0
25
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2
-50
2.5
I
D
= 0.5 I V
GS
D
[Cont.]
= 10V
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
2.0
1.1 1.0 0.9
1.5
1.0
0.8 0.7 0.6
0.5
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
-50
100
OPERATION HERE LIMITED BY RDS (ON)
20,000 100S
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
10,000 Ciss 5,000
10
1mS
10mS 1 TC =+25C TJ =+150C SINGLE PULSE .1 1 10 100 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA 100mS
1,000 500
Coss
DC 100 .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
050-5904 Rev C 3-2002
Crss
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193)
050-5904 Rev C 3-2002
1.95 (.077) 2.14 (.084)
* Source
Drain
* Source terminals are shorted internally. Current handling capability is equal for either Source terminal.
38.0 (1.496) 38.2 (1.504)
* Source Dimensions in Millimeters and (Inches)
ISOTOP(R) is a Registered Trademark of SGS Thomson. APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474
Gate
"UL Recognized" File No. E145592
5,019,522 5,434,095 5,262,336 5,528,058

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